The optoelectronic property of monolayer MoS2 in the presence spin-orbit coupling

Date: 14 September 2016

Venue: UAntwerpen, Campus Groenenborger, Building U, room U.241 - Groenenborgerlaan 171 - 2020 Antwerpen (route: UAntwerpen, Campus Groenenborger)

Time: 4:00 PM - 5:00 PM

Organization / co-organization: Condensed Matter Theory

Short description: CMT seminar presented by Yiming Xiao

The optoelectronic property of monolayer MoS2 in the presence spin-orbit coupling

The discovery of atomically thin two-dimensional (2D) materials has created a completely new field of research. Recently, new types of 2D materials such as monolayer transition metal dichalcogenides MX2 (M=Mo, W, Nb, Ta, Ti, and X=S, Se, Te) have been synthesized and these materials are promising for applications in next generation of high performance nanoelectronics devices. It was found that there exists an intrinsic spin-orbit coupling (SOC) in ML-MoS2, which gives rise to a splitting of the conduction and valence bands with opposite spin orientations. When an electric field is applied perpendicular to a ML-MoS2 fake, inversion symmetry is broken and, according to the Kane-Mele model, a Rashba SOC term is added to the Hamiltonian. The Rashba effect enable the spin-flip electronic transitions between spin split electronic states. The effect of Rashba spin-orbit coupling (SOC) on the optoelectronic properties of n- and p-type monolayer MoS2 were investigated. The optical conductivity is calculated within the Kubo formalism. Under random phase approximation (RPA), the zero and finite temperature plasmons and the plasmon decay of a spin-polarized ML-MoS2 system in the presence of intrinsic SOC have also been examined.

Presented by Yiming Xiao, CMT group, UAntwerpen

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