Applications of the k.p theory to silicon thin layers

Date: 19 July 2017

Venue: Building U, room U.241 - Groenenborgerlaan 171 - 2020 Antwerpen

Time: 4:00 PM - 5:00 PM

Organization / co-organization: CMT

Short description: Condensed Matter Theory seminar presented by Prof. Milan Tadic from University of Belgrade

Applications of the k.p theory to silicon thin layers


The talk deals with the 30-band k.p theory and its applications to silicon quantum wells. Numerous spurious solutions are found in the energy spectra of those quantum wells and the algorithm to remove them is proposed. The interband optical absorption in the Si/SiO2 quantum well is calculated as a function of the well width W, and the effective direct band gap is found to agree with the 1/W2 scaling result of the single-band model. Finally, the valley splitting in thin silicon layers is investigated. It was shown that it is necessary to restrict the computation basis to the first Brillouin zone to achieve a correct description of the valley splitting by the 30-band model.

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