Spin-orbitronics properties of two-dimensional materials made of group V elements
19 December 2019
UAntwerpen, Campus Groenenborger, G.U.247 - Groenenborgerlaan 171 - 2020 Antwerpen (route: UAntwerpen, Campus Groenenborger
Organization / co-organization:
Condensed Matter Theory
Condensed Matter Lecture presented by Prof Tatiana Rappoport from UF Rio de Janeiro, Brazil and Minho University, Portugal
Contact email: email@example.com
The fabrication of bismuthene on top of SiC paved the way for substrate engineering of room-temperature quantum spin Hall insulators made of group V atoms. We explore the spin and orbital angular momentum transport properties of this class of 2D systems and analyze the rich phenomenology that arises from the interplay between topology, disorder, valley, and spin degrees of freedom. We discuss how the quantum spin Hall states are affected by disorder, sublattice resolved potential and Rashba spin-orbit coupling. It is also shown that these materials can be driven to a topological Anderson insulator phase by sufficiently strong disorder. We also investigate the orbital conductivities for different topological phases of these systems. Our results show the existence of orbital-Hall effect (OHE) in topological insulators, with values that exceed those obtained for the spin-Hall effect (SHE). Notably, we have found non-topological insulating phases that display OHE in the absence of SHE.