This information sheet indicates how the course will be organized at pandemic code level yellow and green.
If the colour codes change during the academic year to orange or red, modifications are possible, for example to the teaching and evaluation methods.

Device physics

Course Code :2001WETDPH
Study domain:Physics
Academic year:2020-2021
Semester:2nd semester
Contact hours:20
Study load (hours):84
Contract restrictions: No contract restriction
Language of instruction:English
Exam period:exam in the 2nd semester
Lecturer(s)Wim Magnus
Bart Sorée

3. Course contents *

The first part of this course revisits a number of basic concepts from band theory, many-particle physics and statistical physics which are paramount for deriving the electron and hole densities in semiconductor structures as well as the corresponding potential profile (the so-called "band diagrams" and their "band bending" phenomena. As a straightforward benchmark, we discuss the calculation of the above profiles for an ideal pn-junction and a simplified version of the field-effect transistor (MOS capacitor) while ignoring transport (i.e. sticking to thermal equilibrium) for the sake of simplicity.

The next part briefly touches a few essential concepts and tools from statistical physics and field theory that are needed to set up a theoretical background for
studying transport of mobile electric charges in semiconductors: phase space, the density matrix or statistical operator, the classical Liouville equation and its
quantum counterpart, distribution functions. As a first application, classical transport theory based on the Boltzmann equation is treated in the framework of the Lagrange-Charpit method that employs classical (Newtonian) trajectories to trace the time dependent Boltzmann distribution function. Simple and/or idealized conduction models, such as the Drude model, are included. Next, we select one or two items from a list of quantum transport formalisms, e.g. the quantum mechanical energy and momentum balance equations, the Wigner-Liouville and Wigner-Boltzmann equations, the Kubo-Greenwoord formalism (low-field transport) etc.

Finally, we apply the techniques and machinery developed to deal with classical and quantum transport to a number of specific devices, such as the planar MOSFET, the double-gate MOSFET and the junctionless nanowire FET (or pinch-off FET).