Signal inversion and defect selectivity in charge pumping electrically detected magnetic resonance of a 4H-SiC n-channel metal-oxide-semiconductor field-effect transistor

Source
Applied physics letters - ISSN 0003-6951-126:20 (2025) p. 1-18
Author(s)

Integration of electrically detected magnetic resonance on a chip (EDMRoC) with charge pumping for low-cost and sensitive defect characterization in silicon carbide metal–oxide–semiconductor field-effect transistors

Source
Journal of applied physics - ISSN 0021-8979-137:6 (2025) p. 1-23
Author(s)

Broadening of the silicon vacancy EPR line in SiC revealed through optically selective excitation

Source
Magnetic resonance in solids - ISSN 2072-5981-26:2 (2024) p. 1-9
Author(s)
    B.V. Yavkin, V.A. Soltamov, F.F. Murzakhanov, G.V. Mamin, E.N. Mokhov, Etienne Goovaerts

Complications of charge pumping analysis for silicon carbide MOSFETs

Source
Materials science forum - ISSN 1662-9752-1090 (2023) p. 171-178
Author(s)