Exploring charge pumping-EDMR under accelerated constant current stress of 4H-SiC MOSFETs
Source
2026 IEEE International Reliability Physics Symposium (IRPS), Tucson, AZ, USA- () p. 1-5
Signal inversion and defect selectivity in charge pumping electrically detected magnetic resonance of a 4H-SiC n-channel metal-oxide-semiconductor field-effect transistor
Source
Applied physics letters - ISSN 0003-6951-126:20 (2025) p. 1-18
Integration of electrically detected magnetic resonance on a chip (EDMRoC) with charge pumping for low-cost and sensitive defect characterization in silicon carbide metal–oxide–semiconductor field-effect transistors
Source
Journal of applied physics - ISSN 0021-8979-137:6 (2025) p. 1-23