Exploring charge pumping-EDMR under accelerated constant current stress of 4H-SiC MOSFETs

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2026 IEEE International Reliability Physics Symposium (IRPS), Tucson, AZ, USA- () p. 1-5
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Quantitative 2D fitting of fluorescence-excitation maps : excitation lineshape of single-wall carbon nanotubes

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Nanoscale horizons - ISSN 2055-6756-10:12 (2025) p. 3405-3415
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Tuning intersystem crossing to triplet excitons in sp³-functionalized (6,5) carbon nanotubes through defect density and functional groups

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ACS nano - ISSN 1936-0851-19:41 (2025) p. 36384-36396
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Signal inversion and defect selectivity in charge pumping electrically detected magnetic resonance of a 4H-SiC n-channel metal-oxide-semiconductor field-effect transistor

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Applied physics letters - ISSN 0003-6951-126:20 (2025) p. 1-18
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